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| CHENMKO ENTERPRISE CO.,LTD CHM8809JPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CURRENT 15.5 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1 SO-8 4.06 (0.160) 3.70 (0.146) 8 CONSTRUCTION * N-Channel Enhancement 5.00 (0.197) 4.69 (0.185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIRCUIT 8 DD D D 5 1 SS S G 4 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM8809JPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 30 V V 16 15.5 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 50 2500 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W 2006-01 RATING CHARACTERISTIC CURVES ( CHM8809JPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 24 V, VGS = 0 V VGS = 16V,VDS = 0 V VGS = -16V, VDS = 0 V 30 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=10V, ID=15.5A VGS=4.5V, ID=15A 1 5.5 7.5 34 3 6.6 V m 9.5 S Forward Transconductance VDS =5V, ID = 16A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=15V, ID=16A VGS=5V V DD= 15V ID = 1.0A , VGS = 10 V RGEN= 6 46 15 15 24 14 100 40 55 nC ton 48 28 200 80 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) (Note 2) 2.1 1.3 A V Drain-Source Diode Forward Voltage IS = 2.1A , VGS = 0 V RATING CHARACTERISTIC CURVES ( CHM8809JPT ) Typical Electrical Characteristics Figure 1. Output Characteristics 40 Figure 2. Transfer Characteristics 50 V G S =8 . 0 V I D , DRAIN CURRENT (A) 30 10V I D , DRAIN CURRENT (A) 6.0V 5.0V 4.0V 40 TJ=-55C 30 VG S =3 . 0 V 20 20 TJ=125C 10 10 TJ=25C 0 0 1.5 1.0 0.5 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 2.0 0 1.0 3.0 2.0 VGS , GATE-TO-SOURCE VOLTAGE (V) 4.0 Figure 3. Gate Charge 10 2.2 VDS=15V ID=16A 1.9 Figure 4. On-Resistance Variation with Temperature VGS=10V ID=16A VGS , GATE TO SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE 8 R DS(on) , NO RMALIZED 1.6 6 1.3 4 1.0 2 0.7 0 0 15 30 45 Qg , TOTAL GATE CHARGE (nC) 60 75 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 |
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